Gallium Nitride Field-Effect Transistor, an Emerging Application of GaN Power Devices in the Automotive Sector

Gallium Nitride (GaN) is a pure metal semiconductor material widely used to produce semiconductor devices like diodes and transistors. This highly-efficient material first hit the semiconductor market in the 1990's as a necessary element in many LEDs. In recent years, the demand for GaN power devices has significantly increased. This can be attributed to ability of GaN to absorb, store, and transform light energy. GaN is so versatile that its use can also be applied in other areas of electronics and electronic design as well.

As mentioned above, GaN power devices have many different applications in various industries. Here are just some of the uses of these devices: In the semiconductor industry, gallium nitride power devices play major role in designing semiconductor devices. The device manufacturers are using gallium nitride in many silicon-based integrated circuits. They also make use of gallium nitride in many light-emitting diodes, especially in LEDs. In fact, most LED devices today are based on gallium nitride. In the biomedical industry, gallium nitride power devices have also been used to power advanced laser treatment devices that could help reduce eye and tissue damage after surgery. Some devices are also being developed that can use gallium nitride to increase contrast.

In the energy sector, GaN can be used to create more efficient photovoltaic cells. It will also make it possible to make better, more energy-efficient solar cells. This technology will make it possible to produce more solar power. GaN also can be used to create energy efficient lighting. Since it is a good conductor of electricity, it can be used to create more efficient lighting. It is also possible to use it to make low voltage lighting systems that can operate on batteries when not in use. Gallium Nitride also has the potential to be used in lasers and light emitting diodes. In fact, a company in Japan is already using it to make these lasers. Gallium is an excellent semiconductor that can be used in these types of lasers. This will allow the use of the lasers in a number of different applications and at a lower cost.

In the automotive sector, GaN power devices are used to develop field-effect transistors. The U.S. is witnessing increasing launch of such devices. For instance, in November 2020, Texas Instruments launched 600- and 650-V gallium nitride (GaN) FETs, dubbed the LMG3425R030, thereby expanding its family of high-voltage power-management devices.